Time-Domain Analysis of Chalcogenide Threshold Switching: From ns to ps Scale

A space- and time-dependent theoretical model based on a trap-assisted, charge-transport framework for the amorphous phase of chalcogenide material is used here to interpret available experimental results electric current nanoscale devices in ns–ps time domain. numerical solution constitutive equations bias has been carried out GST-225 devices. The “intrinsic” rise device after application suitable external controlled by microscopic relaxation mobile-carrier population steady-state value. Furthermore, analysis extended include effect circuit electrical switching. quantitative estimate delay due unavoidable parasitic effects made optimised set up configurations recently groups.